Technical parameters/rated power: 330 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.012 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 330 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 83A
Technical parameters/Input capacitance (Ciss): 4530pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 330W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 8.77 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Power Management, Consumer Electronics, Consumer Electronics Products
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
227P
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Infineon | 功能相似 |
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IRF | 类似代替 |
INFINEON IRFB4227PBF 晶体管, MOSFET, N沟道, 65 A, 200 V, 0.0197 ohm, 10 V, 5 V
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IRFB4227PBF
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IFA | 类似代替 |
INFINEON IRFB4227PBF 晶体管, MOSFET, N沟道, 65 A, 200 V, 0.0197 ohm, 10 V, 5 V
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IRFZ14PBF
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VISHAY | 功能相似 | TO-220-3 |
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IRFZ14PBF
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Vishay Siliconix | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
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IRFZ14PBF
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Infineon | 功能相似 |
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LiteOn | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
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IRFZ14PBF
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Vishay Precision Group | 功能相似 | TO-220 |
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