Technical parameters/rated current: 630 mA
Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 360 mΩ, 510 mΩ
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 270 mW
Technical parameters/input capacitance: 46.0 pF
Technical parameters/gate charge: 3.00 nC
Technical parameters/drain source voltage (Vds): 20V, 8V
Technical parameters/leakage source breakdown voltage: ±20 V
Technical parameters/Continuous drain current (Ids): 775 mA
Technical parameters/Input capacitance (Ciss): 46pF @20V(Vds)
Technical parameters/rated power (Max): 270 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-363-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTJD4105CT2
|
ON Semiconductor | 类似代替 | SOT-363 |
小信号MOSFET的20 V / -8.0 V，互补， 0.63 A / -0.775 A， SC -88 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
|
||
NTJD4105CT2G
|
ON Semiconductor | 类似代替 | SOT-363-6 |
0.775A,20V,N/P沟道组合MOSFET
|
||
NTJD4105CT4
|
ON Semiconductor | 类似代替 | SOT-363 |
小信号MOSFET的20 V / -8.0 V，互补， 0.63 A / -0.775 A， SC -88 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
|
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