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Model NTJD4105CT4
Description 20 V/-8.0 V for small signal MOSFET, complementary, 0.63 A / -0.775 A， SC -88 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
Product QR code
Brand: ON Semiconductor
Packaging SOT-363
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1006) Minimum order quantity(1)
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Technical parameters/rated current:

630 mA

 

Technical parameters/drain source resistance:

360 mΩ, 510 mΩ

 

Technical parameters/polarity:

N-Channel, P-Channel

 

Technical parameters/dissipated power:

270 mW

 

Technical parameters/Input capacitance:

46.0 pF

 

Technical parameters/gate charge:

3.00 nC

 

Technical parameters/drain source voltage (Vds):

20V, 8V

 

Technical parameters/Continuous drain current (Ids):

775 mA

 

Technical parameters/Input capacitance (Ciss):

46pF @20V(Vds)

 

Technical parameters/rated power (Max):

270 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-363

 

Dimensions/Packaging:

SOT-363

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTJD4105CT2 NTJD4105CT2 ON Semiconductor 完全替代 SOT-363
小信号MOSFET的20 V / -8.0 V，互补， 0.63 A / -0.775 A， SC -88 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
PDF
NTJD4105CT4 NTJD4105CT4 ON Semiconductor 类似代替 SOT-363
小信号MOSFET的20 V / -8.0 V，互补， 0.63 A / -0.775 A， SC -88 Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
PDF

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