Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 33.0 A
Technical parameters/product series: IRF540NS
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 33.0 A
Technical parameters/rise time: 35.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TEL83235420
External dimensions/packaging: TEL83235420
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB35NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STB40NF10LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB40NF10LT4 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
|
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