Technical parameters/rated power: 125 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/product series: IRF7749L2
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 12.32 nF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 33.0 A
Technical parameters/rise time: 43 ns
Technical parameters/Input capacitance (Ciss): 12320pF @25V(Vds)
Technical parameters/rated power (Max): 3.3 W
Technical parameters/descent time: 39 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 11
Encapsulation parameters/Encapsulation: DirectFET™ Isometric L8
External dimensions/length: 9.15 mm
External dimensions/width: 7.1 mm
External dimensions/height: 0.52 mm
External dimensions/packaging: DirectFET™ Isometric L8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7749L2TRPBF
|
Infineon | 功能相似 | Direct-FET |
INFINEON IRF7749L2TRPBF 场效应管, MOSFET, N沟道
|
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