Technical parameters/rated power: 125 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0011 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.3 W
Technical parameters/threshold voltage: 2.9 V
Technical parameters/input capacitance: 12320 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 33A
Technical parameters/rise time: 43 ns
Technical parameters/Input capacitance (Ciss): 12320pF @25V(Vds)
Technical parameters/descent time: 39 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 3.3W (Ta), 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/length: 9.15 mm
External dimensions/width: 7.1 mm
External dimensions/height: 0.74 mm
External dimensions/packaging: Direct-FET
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
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