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Model IRF7759L2TRPBF
Description MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200NC
Product QR code
Brand: International Rectifier
Packaging Direct-FET
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7886) Minimum order quantity(1)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.3 W

 

Technical parameters/product series:

IRF7759L2

 

Technical parameters/drain source voltage (Vds):

75 V

 

Technical parameters/Continuous drain current (Ids):

26.0 A

 

Technical parameters/Input capacitance (Ciss):

12222pF @25V(Vds)

 

Technical parameters/rated power (Max):

3.3 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

15

 

Encapsulation parameters/Encapsulation:

Direct-FET

 

Dimensions/Packaging:

Direct-FET

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AUIRF7759L2TR AUIRF7759L2TR Infineon 类似代替 Direct-FET
INFINEON AUIRF7759L2TR 晶体管, MOSFET, AEC-Q101, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V 新
IRF7749L2TRPBF IRF7749L2TRPBF Infineon 功能相似 Direct-FET
INFINEON IRF7749L2TRPBF 场效应管, MOSFET, N沟道
PDF
IRF7779L2TRPBF IRF7779L2TRPBF International Rectifier 类似代替 DirectFET-9
INFINEON IRF7779L2TRPBF 晶体管, MOSFET, N沟道, 67 A, 150 V, 0.009 ohm, 10 V, 4 V 新

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