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Description HEXFET® N Channel power MOSFET maximum 50A, Infineon HEXFET ® Power MOSFETs have various robust single N-channel devices used to provide AC to DC and DC to DC power for audio, consumer electronics, motor control, lighting, and household appliances. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.65  yuan 1.65yuan
5+:
$ 2.2316
25+:
$ 2.0663
50+:
$ 1.9505
100+:
$ 1.9010
500+:
$ 1.8679
2500+:
$ 1.8266
5000+:
$ 1.8100
10000+:
$ 1.7852
Quantity
5+
25+
50+
100+
500+
Price
$2.2316
$2.0663
$1.9505
$1.9010
$1.8679
Price $ 2.2316 $ 2.0663 $ 1.9505 $ 1.9010 $ 1.8679
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4107) Minimum order quantity(5)
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Technical parameters/rated power: 52 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.115 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 79 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 640 pF

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Continuous drain current (Ids): 16A

Technical parameters/rise time: 27 ns

Technical parameters/Input capacitance (Ciss): 640pF @25V(Vds)

Technical parameters/rated power (Max): 79 W

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 79W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, power management

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFR3910 IRFR3910 International Rectifier 功能相似 TO-252
DPAK N-CH 100V 16A
IRFR3910PBF IRFR3910PBF International Rectifier 类似代替 TO-252-3
INFINEON IRFR3910PBF 晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
PDF
IRFR3910PBF IRFR3910PBF Infineon 类似代替 TO-252-3
INFINEON IRFR3910PBF 晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
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