Technical parameters/rated power: 52 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.115 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 79 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 640 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 16A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 640pF @25V(Vds)
Technical parameters/rated power (Max): 79 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 79W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3910
|
International Rectifier | 功能相似 | TO-252 |
DPAK N-CH 100V 16A
|
||
IRFR3910PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR3910PBF 晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
|
||
IRFR3910PBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFR3910PBF 晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
|
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