Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Input capacitance (Ciss): | 640pF @25V(Vds) |
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Technical parameters/rated power (Max): | 79 W |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD10NF10T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD10NF10T4 晶体管, MOSFET, N沟道, 13 A, 100 V, 130 mohm, 10 V, 3 V
|
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