Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 8A
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HAT1021R
|
Renesas Electronics | 功能相似 | SOP |
硅P沟道功率MOSFET高速电源开关 Silicon P Channel Power MOSFET High Speed Power Switching
|
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|
|
HITACHI | 功能相似 | SOIC |
硅P沟道功率MOSFET高速电源开关 Silicon P Channel Power MOSFET High Speed Power Switching
|
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|
|
Renesas Electronics | 功能相似 | SOP |
硅P沟道功率MOSFET高速电源开关 Silicon P Channel Power MOSFET High Speed Power Switching
|
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