Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5.5A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ECH8301
|
ON Semiconductor | 功能相似 |
P-CH 20V 8A
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|
HITACHI | 类似代替 | SOIC |
硅P沟道功率MOSFET高速电源开关 Silicon P Channel Power MOSFET High Speed Power Switching
|
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|
Renesas Electronics | 类似代替 | SOP |
硅P沟道功率MOSFET高速电源开关 Silicon P Channel Power MOSFET High Speed Power Switching
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