Technical parameters/dissipated power: 164000 mW
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/rated power (Max): 164 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 164000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGT1S20N60C3S9A
|
Fairchild | 类似代替 | TO-263-3 |
Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(2+Tab) D2PAK T/R
|
||
HGT1S20N60C3S9A
|
ON Semiconductor | 类似代替 | TO-263-3 |
Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(2+Tab) D2PAK T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review