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Model HGT1S20N60C3S9A
Description IGBT UFS 45 A 600 V N沟道 TO-263AB 卷盘包装
Product QR code
Brand: Fairchild
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
12.44  yuan 12.44yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7768) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

45.0 A

 

Technical parameters/dissipated power:

164000 mW

 

Technical parameters/breakdown voltage (collector emitter):

600 V

 

Technical parameters/rated power (Max):

164 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

164000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HGT1S20N60C3S9A HGT1S20N60C3S9A Fairchild 类似代替 TO-263-3
Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(2+Tab) D2PAK T/R
HGT1S20N60C3S9A HGT1S20N60C3S9A ON Semiconductor 类似代替 TO-263-3
Trans IGBT Chip N-CH 600V 45A 164000mW 3Pin(2+Tab) D2PAK T/R
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