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Model PBSS5350T
Description Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
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Brand: Nexperia
Packaging TO-236
Delivery time
Packaging method
Standard packaging quantity 1
1.89  yuan 1.89yuan
5+:
$ 2.5461
25+:
$ 2.3575
50+:
$ 2.2255
100+:
$ 2.1689
500+:
$ 2.1312
2500+:
$ 2.0840
5000+:
$ 2.0652
10000+:
$ 2.0369
Quantity
5+
25+
50+
100+
500+
Price
$2.5461
$2.3575
$2.2255
$2.1689
$2.1312
Price $ 2.5461 $ 2.3575 $ 2.2255 $ 2.1689 $ 2.1312
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4422) Minimum order quantity(5)
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Technical parameters/minimum current amplification factor (hFE): 80

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 1.2 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/length: 3 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1 mm

External dimensions/packaging: TO-236

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: PB free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FMMT720 FMMT720 Zetex 功能相似 SOT-23-3
DIODES INC. FMMT720 单晶体管 双极, PNP, 40 V, 190 MHz, 625 mW, -1.5 A, 475 hFE
PBSS5350T PBSS5350T NXP 类似代替 SOT-23
低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
PBSS5350T PBSS5350T Nexperia 类似代替 TO-236
低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
PDF
PBSS5350T,215 PBSS5350T,215 NXP 功能相似 SOT-23-3
NXP PBSS5350T,215 单晶体管 双极, PNP, -50 V, 100 MHz, 300 mW, 3 A, 200 hFE
PDF

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