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Model PBSS5350T

Description NXP PBSS5350T 单晶体管双极, PNP, 50 V, 300 mW, 3 A, 200 hFE

Brand: NXP

Packaging SOT-23

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	300 mW
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	2A
Technical parameters/minimum current amplification factor (hFE):	80
Technical parameters/DC current gain (hFE):	200
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1.2 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23
Dimensions/Length:	3 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Cut Tape (CT)
Other/Manufacturing Applications:	Power Management, Consumer Electronics, Industrial, Signal Processing
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs Information/Hong Kong Import and Export License:	NLR

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PBSS5350T,215	NXP	功能相似	SOT-23-3	NXP PBSS5350T,215 单晶体管双极, PNP, -50 V, 100 MHz, 300 mW, 3 A, 200 hFE	PDF