Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-883-3
External dimensions/height: 0.47 mm
External dimensions/packaging: SOT-883-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 类似代替 | DFN |
PNP电阻配备晶体管; R1 = 2.2千欧,R2 = 47千欧 PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
|
||
PDTA123JM
|
Nexperia | 类似代替 |
PNP电阻配备晶体管; R1 = 2.2千欧,R2 = 47千欧 PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
|
|||
PDTA123JM,315
|
Nexperia | 类似代替 | SOT-883-3 |
双极晶体管 - 预偏置 TRANS RET TAPE-7
|
||
PDTA123JM,315
|
NXP | 类似代替 | SOT-883-3 |
双极晶体管 - 预偏置 TRANS RET TAPE-7
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review