Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-883-3 |
|
Dimensions/Length: | 1.02 mm |
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Dimensions/Width: | 0.62 mm |
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Dimensions/Height: | 0.47 mm |
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Dimensions/Packaging: | SOT-883-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 类似代替 | DFN |
PNP电阻配备晶体管; R1 = 2.2千欧,R2 = 47千欧 PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
|
||
PDTA123JM
|
Nexperia | 类似代替 |
PNP电阻配备晶体管; R1 = 2.2千欧,R2 = 47千欧 PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
|
|||
PDTA123JM,315
|
Nexperia | 类似代替 | SOT-883-3 |
双极晶体管 - 预偏置 TRANS RET TAPE-7
|
||
PDTA123JM,315
|
NXP | 类似代替 | SOT-883-3 |
双极晶体管 - 预偏置 TRANS RET TAPE-7
|
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