Technical parameters/power supply voltage (DC): 12.0 V
Technical parameters/number of output interfaces: 1
Technical parameters/Input voltage (DC): 10.8V ~ 13.2V
Technical parameters/output voltage: 0.55V ~ 1.8V
Technical parameters/output current: 12 A
Technical parameters/Static current: 10.0 mA
Technical parameters/topology structure: Buck
Technical parameters/input voltage (Max): 13.2 V
Technical parameters/input voltage (Min): 10.8 V
Technical parameters/output current (Max): 12 A
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 10
Encapsulation parameters/Encapsulation: DIP-10
External dimensions/packaging: DIP-10
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Artesyn Embedded Technologies | 完全替代 |
15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
|
|||
PTH12010YAS
|
TI | 完全替代 | SMD-10 |
15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
|
||
PTH12010YAZ
|
TI | 完全替代 | DIP-10 |
15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
|
||
PTH12010YAZ
|
Artesyn Embedded Technologies | 完全替代 | SMD-10 |
15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
|
||
|
|
TI | 完全替代 | DIP-10 |
15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
|
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