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Model PTH12010YAS

Description 15Non isolated DDR/QDR Memory Bus Termination Modules 15-A Non Isolated DDR/QDR Memory Bus Termination Modules

Brand: TI

Packaging SMD-10

Delivery time

Packaging method Tray

Standard packaging quantity 1

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Technical parameters/power supply voltage (DC):	12.0 V
Technical parameters/rated power:	22 W
Technical parameters/number of output interfaces:	1
Technical parameters/Input voltage (DC):	10.8V ~ 13.2V
Technical parameters/output voltage:	0.55V ~ 1.8V
Technical parameters/output current:	12 A
Technical parameters/Flammability level:	UL 94 V-0
Technical parameters/Static current:	10.0 mA
Technical parameters/topology structure:	Buck
Technical parameters/Input voltage (Max):	13.2 V
Technical parameters/input voltage (Min):	10.8 V
Technical parameters/output current (Max):	12 A
Technical parameters/rated power (Max):	22 W
Technical parameters/operating temperature (Max):	85 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	10
Encapsulation parameters/Encapsulation:	SMD-10
Dimensions/Length:	34.8 mm
Dimensions/Width:	15.8 mm
Dimensions/Height:	9.57 mm
Dimensions/Packaging:	SMD-10
Physical parameters/weight:	3.70 g
Physical parameters/operating temperature:	-40℃ ~ 85℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tray
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

Alternative material

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PTH12010YAST	TI	完全替代	DIP-10	15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
PTH12010YAZ	TI	完全替代	DIP-10	15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES
PTH12010YAZ	Artesyn Embedded Technologies	完全替代	SMD-10	15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES	PDF
PTH12010YAZT	TI	完全替代	DIP-10	15非隔离DDR / QDR存储器总线终端模块 15-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES