Technical parameters/drain source resistance: 0.037 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4.7A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-457
External dimensions/packaging: SOT-457
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3433CDV-T1-GE3
|
Vishay Siliconix | 功能相似 | TSOT-23-6 |
P 通道 MOSFET,8V 至 20V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
||
SI3433CDV-T1-GE3
|
VISHAY | 功能相似 | TSOP-6 |
P 通道 MOSFET,8V 至 20V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
|
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