Technical parameters/drain source resistance: 0.78 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 530 mW
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 550 mA
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 23pF @30V(Vds)
Technical parameters/rated power (Max): 530 mW
Technical parameters/descent time: 2.2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 530mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416-3
External dimensions/length: 1.8 mm
External dimensions/width: 0.9 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-416-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMR780SN
|
NXP | 功能相似 | SC-75 |
N沟道uTrenchMOS标准水平FET N-channel UTrenchMOS standard level FET
|
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