Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.55A
Encapsulation parameters/Encapsulation: SC-75
External dimensions/packaging: SC-75
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMR780SN,115
|
NXP | 功能相似 | SOT-416-3 |
N 通道 MOSFET,高达 0.9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
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