Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 5.90 A
Technical parameters/Input capacitance (Ciss): 410pF @20V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/dissipated power (Max): 280 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTR4501NT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NTR4501NT1G 晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
|
||
PMV30UN,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PMV30UN,215 晶体管, MOSFET, N沟道, 2 A, 20 V, 0.03 ohm, 4.5 V, 700 mV
|
||
PMV31XN
|
NXP | 完全替代 | SOT-23 |
NXP PMV31XN 晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
|
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