Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.03 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.9 W |
|
Technical parameters/threshold voltage: | 700 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Continuous drain current (Ids): | 5.70 A |
|
Technical parameters/rise time: | 13 ns |
|
Technical parameters/Input capacitance (Ciss): | 460pF @20V(Vds) |
|
Technical parameters/rated power (Max): | 1.9 W |
|
Technical parameters/descent time: | 13 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/dissipated power (Max): | 1.9W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMN28UN,135
|
NXP | 功能相似 | SOT-457-6 |
N 通道 MOSFET，1A 至 9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
|
||
PMV31XN
|
NXP | 功能相似 | SOT-23 |
NXP PMV31XN 晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
|
||
PMV31XN,215
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB N-CH 20V 5.9A
|
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