Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 280 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.40 A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 350pF @30V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 5.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 280 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMV45EN,215
|
Nexperia | 功能相似 | SOT-23-3 |
N 通道 MOSFET，1A 至 9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
|
||
PMV45EN,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 MOSFET，1A 至 9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
|
||
PMV45EN2
|
Nexperia | 类似代替 | 3 |
Trans MOSFET N-CH 30V 5.1A 3Pin TO-236AB
|
||
PMV45EN2
|
NXP | 类似代替 | SOT-23 |
Trans MOSFET N-CH 30V 5.1A 3Pin TO-236AB
|
||
PMV60EN,215
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB N-CH 30V 4.7A
|
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