Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.40 A
Technical parameters/Input capacitance (Ciss): 350pF @30V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMV45EN,215
|
Nexperia | 功能相似 | SOT-23-3 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
PMV45EN,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 MOSFET,1A 至 9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
||
PMV45EN2
|
Nexperia | 类似代替 | 3 |
Trans MOSFET N-CH 30V 5.1A 3Pin TO-236AB
|
||
PMV45EN2
|
NXP | 类似代替 | SOT-23 |
Trans MOSFET N-CH 30V 5.1A 3Pin TO-236AB
|
||
PMV60EN,215
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB N-CH 30V 4.7A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review