Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 600 mA
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 250 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PN2222G
|
ON Semiconductor | 完全替代 | TO-92-3 |
通用晶体管NPN硅 General Purpose Transistors NPN Silicon
|
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PN2222TA
|
Fairchild | 功能相似 | TO-92-3 |
PN2222 Series 30V 600mA Through Hole NPN Epitaxial Silicon Transistor - TO-92-3
|
||
PN2222TA
|
ON Semiconductor | 功能相似 | TO-226-3 |
PN2222 Series 30V 600mA Through Hole NPN Epitaxial Silicon Transistor - TO-92-3
|
||
PN2222TF
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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