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Model PN2222G

Description General Purpose Transistors NPN Silicon

Brand: ON Semiconductor

Packaging TO-92-3

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	30.0 V
Technical parameters/rated current:	600 mA
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	625 mW
Technical parameters/gain bandwidth product:	250 MHz
Technical parameters/breakdown voltage (collector emitter):	30 V
Technical parameters/Maximum allowable collector current:	0.6A
Technical parameters/minimum current amplification factor (hFE):	100 @150mA, 10V
Technical parameters/rated power (Max):	625 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	625 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-92-3
Dimensions/Length:	5.2 mm
Dimensions/Width:	4.19 mm
Dimensions/Height:	5.33 mm
Dimensions/Packaging:	TO-92-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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