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Model PN5179
Description NPNRF NPN RF Transistor
Product QR code
Brand: Fairchild
Packaging TO-226-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9456) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 12.0 V

Technical parameters/rated current: 50.0 mA

Technical parameters/dissipated power: 350 mW

Technical parameters/breakdown voltage (collector emitter): 12 V

Technical parameters/gain: 15 dB

Technical parameters/minimum current amplification factor (hFE): 25 @3mA, 1V

Technical parameters/Maximum current amplification factor (hFE): 250

Technical parameters/rated power (Max): 350 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 350 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/length: 4.7 mm

External dimensions/width: 3.93 mm

External dimensions/height: 5.33 mm

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PN5179 PN5179 ON Semiconductor 类似代替 TO-226-3
NPN晶体管RF NPN RF Transistor
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PN5179 PN5179 Fairchild 类似代替 TO-226-3
NPN晶体管RF NPN RF Transistor
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PRF949,115 PRF949,115 NXP 功能相似 SC-75-3
PRF949,115 , NPN 射频双极晶体管, 0.05 A, Vce=10 V, HFE:100, 9000 MHz, 3针 SMPAK封装
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