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Model PN5179
Description Trans RF BJT NPN 12V 0.05A 3Pin TO-92 Bulk
Product QR code
Brand: ON Semiconductor
Packaging TO-226-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7756) Minimum order quantity(1)
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Technical parameters/dissipated power:

350 mW

 

Technical parameters/breakdown voltage (collector emitter):

12 V

 

Technical parameters/gain:

15 dB

 

Technical parameters/minimum current amplification factor (hFE):

25 @3mA, 1V

 

Technical parameters/rated power (Max):

350 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

350 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-226-3

 

Dimensions/Height:

5.33 mm

 

Dimensions/Packaging:

TO-226-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PN5179 PN5179 ON Semiconductor 类似代替 TO-226-3
NPN晶体管RF NPN RF Transistor
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PN5179 PN5179 Fairchild 类似代替 TO-226-3
NPN晶体管RF NPN RF Transistor
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PRF949,115 PRF949,115 NXP 功能相似 SC-75-3
PRF949,115 , NPN 射频双极晶体管, 0.05 A, Vce=10 V, HFE:100, 9000 MHz, 3针 SMPAK封装
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