Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS2222G
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR MPS2222G 双极晶体管
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MPSW05G
|
ON Semiconductor | 功能相似 | TO-226-3 |
一瓦放大器晶体管 One Watt Amplifier Transistors
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PN3643
|
Central Semiconductor | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SW
|
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PN3643
|
Fairchild | 功能相似 | TO-226-3 |
双极晶体管 - 双极结型晶体管(BJT) NPN Gen Pur SW
|
||
|
|
Central Semiconductor | 功能相似 | TO-92 |
TO-92 NPN 30V 0.5A
|
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