Technical parameters/dissipated power: 8.3 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 4350pF @20V(Vds)
Technical parameters/rated power (Max): 8.3 W
Technical parameters/descent time: 90 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 8.3W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN006-20K
|
Philips | 类似代替 |
N沟道的TrenchMOS SiliconMAX超低水平FET N-channel TrenchMOS SiliconMAX ultra low level FET
|
|||
PSMN006-20K
|
NXP | 类似代替 | SO-8 |
N沟道的TrenchMOS SiliconMAX超低水平FET N-channel TrenchMOS SiliconMAX ultra low level FET
|
||
PSMN006-20K,518
|
NXP | 类似代替 | SOIC-8 |
MOSFET N-CH 20V 32A 8-SOIC
|
||
PSMN006-20K,518
|
Nexperia | 类似代替 | SOIC-8 |
MOSFET N-CH 20V 32A 8-SOIC
|
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