Technical parameters/dissipated power: 8.3 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 4350pF @20V(Vds)
Technical parameters/rated power (Max): 8.3 W
Technical parameters/descent time: 90 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN006-20K
|
Philips | 功能相似 |
Power Field-Effect Transistor
|
|||
PSMN006-20K
|
NXP | 功能相似 | SO-8 |
Power Field-Effect Transistor
|
||
PSMN006-20K,518
|
NXP | 类似代替 | SOIC-8 |
PSMN006-20K - N沟道TrenchMOS SiliconMAX超低电平FET
|
||
PSMN006-20K,518
|
Nexperia | 类似代替 | SOIC-8 |
PSMN006-20K - N沟道TrenchMOS SiliconMAX超低电平FET
|
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