Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 8.8 mΩ
Technical parameters/dissipated power: 230 W
Technical parameters/input capacitance: 8250 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/rise time: 59 ns
Technical parameters/Input capacitance (Ciss): 8250pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/descent time: 43 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 |
MOS(场效应管)/BUK7510-100B 管装
|
|||
BUK9510-100B,127
|
NXP | 类似代替 | TO-220-3 |
TO-220AB N-CH 100V 75A
|
||
PSMN009-100P
|
NXP | 类似代替 | TO-220 |
Trans MOSFET N-CH Si 100V 75A 3Pin(3+Tab) TO-220AB
|
||
|
|
Nexperia | 类似代替 | TO-220-3 |
Trans MOSFET N-CH Si 100V 75A 3Pin(3+Tab) TO-220AB
|
||
PSMN009-100P,127
|
NXP | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 75A
|
||
PSMN009-100P,127
|
Nexperia | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 75A
|
||
PSMN015-100P,127
|
Nexperia | 类似代替 | TO-220-3 |
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.012 ohm, 10 V, 3 V
|
||
PSMN015-100P,127
|
NXP | 类似代替 | TO-220-3 |
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.012 ohm, 10 V, 3 V
|
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