Technical parameters/drain source resistance: | 7.5 Ω |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 230 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 75A |
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Technical parameters/Input capacitance (Ciss): | 8250pF @25V(Vds) |
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Technical parameters/rated power (Max): | 230 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 230W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 |
MOS(场效应管)/BUK7510-100B 管装
|
|||
BUK9510-100B,127
|
NXP | 类似代替 | TO-220-3 |
TO-220AB N-CH 100V 75A
|
||
PSMN009-100P
|
NXP | 类似代替 | TO-220 |
Trans MOSFET N-CH Si 100V 75A 3Pin(3+Tab) TO-220AB
|
||
|
|
Nexperia | 类似代替 | TO-220-3 |
Trans MOSFET N-CH Si 100V 75A 3Pin(3+Tab) TO-220AB
|
||
PSMN009-100P,127
|
NXP | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 75A
|
||
PSMN009-100P,127
|
Nexperia | 功能相似 | TO-220-3 |
TO-220AB N-CH 100V 75A
|
||
PSMN015-100P,127
|
Nexperia | 类似代替 | TO-220-3 |
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.012 ohm, 10 V, 3 V
|
||
PSMN015-100P,127
|
NXP | 类似代替 | TO-220-3 |
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.012 ohm, 10 V, 3 V
|
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