Technical parameters/dissipated power: 230 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Input capacitance (Ciss): 8250pF @25V(Vds)
Technical parameters/rated power (Max): 230 W
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP032N08
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP032N08 晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0025 ohm, 10 V, 3.5 V
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FDP047N08
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ON Semiconductor | 功能相似 | TO-220-3 |
PowerTrench® N 通道 MOSFET,超过 60A,Fairchild Semiconductor ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
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IPP052NE7N3 G
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IPP052NE7N3 G 晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0047 ohm, 10 V, 3.1 V
|
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