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Model IPP052NE7N3 G

Description INFINEON IPP052NE7N3 G Transistor, MOSFET, N-channel, 80 A, 75 V, 0.0047 ohm, 10 V, 3.1 V

Brand: Infineon

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.0047 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	150 W
Technical parameters/threshold voltage:	3.1 V
Technical parameters/drain source voltage (Vds):	75 V
Technical parameters/rise time:	11 ns
Technical parameters/Input capacitance (Ciss):	3570pF @37.5V(Vds)
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	150000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10 mm
Dimensions/Width:	4.4 mm
Dimensions/Height:	15.65 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Synchronous rectification for AC-DC SMPS, Isolated DC-DC converters (telecom and datacom systems), Class D audio amplifiers, Or-ing switches and circuit breakers in 48V systems
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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