Technical parameters/drain source resistance: | 0.004 Ω |
|
Technical parameters/dissipated power: | 310 W |
|
Technical parameters/threshold voltage: | 4 V |
|
Technical parameters/drain source voltage (Vds): | 75 V |
|
Technical parameters/rise time: | 88 ns |
|
Technical parameters/Input capacitance (Ciss): | 6600pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 310 W |
|
Technical parameters/descent time: | 45 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 310000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail, Tube |
|
Other/Manufacturing Applications: | Power Management, Communications & Networking, Motor Drive & Control |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP047AN08A0
|
ON Semiconductor | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP047AN08A0 晶体管, MOSFET, N沟道, 80 A, 75 V, 0.004 ohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review