Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 11 mΩ
Technical parameters/dissipated power: 148 W
Technical parameters/input capacitance: 2782 pF
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80 V
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 2782pF @12V(Vds)
Technical parameters/rated power (Max): 148 W
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 148W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP75N08A
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
FDP75N08A
|
Freescale | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
FDP75N08A
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
|
||
|
HUF75545P3
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR HUF75545P3 晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
|
||
HUF75545P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR HUF75545P3 晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
|
||
STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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