Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 114 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 73 ns
Technical parameters/Input capacitance (Ciss): 3907pF @12V(Vds)
Technical parameters/rated power (Max): 114 W
Technical parameters/descent time: 28 ns
Technical parameters/dissipated power (Max): 114W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP8870
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP8870. 场效应管, MOSFET, N沟道
|
||
STP200NF03
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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