Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 120 A
Technical parameters/drain source resistance: 0.0032 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 195 ns
Technical parameters/Input capacitance (Ciss): 4950pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP8870
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP8870. 场效应管, MOSFET, N沟道
|
||
STB60NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
|
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