Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.00179 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 88 W
Technical parameters/threshold voltage: 1.7 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 100 A
Technical parameters/rise time: 62 ns
Technical parameters/Input capacitance (Ciss): 3468pF @12V(Vds)
Technical parameters/rated power (Max): 88 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-669-4
External dimensions/width: 4.1 mm
External dimensions/packaging: SOT-669-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
|||
PSMN2R5-30YL
|
NXP | 功能相似 | LFPAK |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
||
PSMN2R5-30YL,115
|
Nexperia | 功能相似 | SOT-669 |
N沟道 VDS=30V VGS=±20V ID=100A P=88W
|
||
PSMN2R5-30YL,115
|
NXP | 功能相似 | SOT-669-4 |
N沟道 VDS=30V VGS=±20V ID=100A P=88W
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review