Technical parameters/dissipated power: | 88 W |
|
Technical parameters/Input capacitance: | 3468 pF |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/rise time: | 62 ns |
|
Technical parameters/Input capacitance (Ciss): | 3468pF @12V(Vds) |
|
Technical parameters/rated power (Max): | 88 W |
|
Technical parameters/descent time: | 25 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 88W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 5 |
|
Encapsulation parameters/Encapsulation: | SOT-669 |
|
Dimensions/Length: | 5 mm |
|
Dimensions/Packaging: | SOT-669 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
|||
PSMN2R5-30YL
|
NXP | 功能相似 | LFPAK |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
||
PSMN2R5-30YL,115
|
Nexperia | 功能相似 | SOT-669 |
N沟道 VDS=30V VGS=±20V ID=100A P=88W
|
||
PSMN2R5-30YL,115
|
NXP | 功能相似 | SOT-669-4 |
N沟道 VDS=30V VGS=±20V ID=100A P=88W
|
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