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Model PSMN057-200B
Description NTrenchMOS N-channel TrenchMOS transistor
Product QR code
Brand: NXP
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
5.65  yuan 5.65yuan
10+:
$ 6.7824
100+:
$ 6.4433
500+:
$ 6.2172
1000+:
$ 6.2059
2000+:
$ 6.1607
5000+:
$ 6.1042
7500+:
$ 6.0589
10000+:
$ 6.0363
Quantity
10+
100+
500+
1000+
2000+
Price
$6.7824
$6.4433
$6.2172
$6.2059
$6.1607
Price $ 6.7824 $ 6.4433 $ 6.2172 $ 6.2059 $ 6.1607
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5035) Minimum order quantity(10)
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Technical parameters/dissipated power: 250 W

Technical parameters/rise time: 58 ns

Technical parameters/descent time: 78 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.3 mm

External dimensions/width: 9.4 mm

External dimensions/height: 4.5 mm

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PSMN057-200B PSMN057-200B Nexperia 功能相似
Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PDF
PSMN057-200B PSMN057-200B NXP 功能相似 TO-263-3
Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PDF
PSMN057-200B,118 PSMN057-200B,118 NXP 功能相似 TO-263-3
PSMN057-200B,118 编带
PDF

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