Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 30 mΩ
Technical parameters/dissipated power: 250 W
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/rise time: 71 ns
Technical parameters/descent time: 76 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9610
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET P-CH 200V 1.8A TO-220AB
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IRF9610
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International Rectifier | 功能相似 |
MOSFET P-CH 200V 1.8A TO-220AB
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IRF9610
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Vishay Intertechnology | 功能相似 |
MOSFET P-CH 200V 1.8A TO-220AB
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|
|
Samsung | 功能相似 | SFM |
MOSFET P-CH 200V 6.5A TO-220AB
|
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IRF9630
|
International Rectifier | 功能相似 |
MOSFET P-CH 200V 6.5A TO-220AB
|
|||
PSMN030-150P,127
|
NXP | 类似代替 | TO-220-3 |
TO-220AB N-CH 150V 55.5A
|
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