Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 250 W |
|
Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/Continuous drain current (Ids): | 55.5 A |
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Technical parameters/Input capacitance (Ciss): | 3680pF @25V(Vds) |
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Technical parameters/rated power (Max): | 250 W |
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Technical parameters/dissipated power (Max): | 250W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP2532
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP2532 晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
|
||
FDP2532
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP2532 晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
|
||
PSMN030-150P
|
Nexperia | 类似代替 | TO-220-3 |
Trans MOSFET N-CH Si 150V 55.5A 3Pin(3+Tab) TO-220AB
|
||
SPP07N60S5
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP07N60S5 功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4.5 V
|
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