Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 7 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 18A
Technical parameters/rise time: 8.9 ns
Technical parameters/Input capacitance (Ciss): 1293pF @20V(Vds)
Technical parameters/descent time: 8.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Ta), 30W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: HSOP-8
External dimensions/height: 1.05 mm
External dimensions/packaging: HSOP-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIJ800DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 40V 20A PPAK SO-8
|
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