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Model SIJ800DP-T1-GE3
Description VISHAY SIJ800DP-T1-GE3 MOSFET Transistor, N Channel, 20A, 40V, 9.5mohm, 10V, 3V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
3.22  yuan 3.22yuan
5+:
$ 4.3457
25+:
$ 4.0238
50+:
$ 3.7984
100+:
$ 3.7019
500+:
$ 3.6375
2500+:
$ 3.5570
5000+:
$ 3.5248
10000+:
$ 3.4765
Quantity
5+
25+
50+
100+
500+
Price
$4.3457
$4.0238
$3.7984
$3.7019
$3.6375
Price $ 4.3457 $ 4.0238 $ 3.7984 $ 3.7019 $ 3.6375
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3305) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.0095 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 35.7 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 40 V

Technical parameters/Continuous drain current (Ids): 20.0 A

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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