Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -30.0 A
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 440pF @10V(Vds)
Technical parameters/rated power (Max): 1.25 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3136PT1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
P 通道功率 MOSFET,20V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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