Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/drain source resistance: 110 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 800pF @10V(Vds)
Technical parameters/rated power (Max): 1.25 W
Technical parameters/descent time: 20 ns
Technical parameters/dissipated power (Max): 1.25W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTUD3170NZT5G
|
ON Semiconductor | 功能相似 | SOT-963-6 |
ON SEMICONDUCTOR NTUD3170NZT5G. 场效应管, MOSFET, 双N沟道, 20V, SOT-963
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review